A model for the phase-change process in GeSbTe thin films used for optical and electrical data storage

摘要

Copyright © 2003 Society of Photo-Optical Instrumentation Engineers. This paper was published in Proceedings of SPIE Volume 5069, pp. 98-104 and is made available with permission of SPIE. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.